: As MOS technology scales down to nanometer sizes, it faces challenges such as leakage current, variability, and the physical limits of silicon technology. Researchers are exploring new materials (like high-k dielectrics and metal gates) and device structures (such as FinFETs and Gate-All-Around FETs) to overcome these challenges.
Unlike general textbooks (like Sze), this book focuses specifically on the MIS (Metal Insulator Semiconductor) device physics with unparalleled detail. : As MOS technology scales down to nanometer